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NP2312AMR
20V N-Channel Enhancement Mode MOSFET
The NP2312AMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Description
The NP2312AMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
VDS =20V，ID =8A RDS(ON)(Typ.)=12.6mΩ @VGS=2.5V RDS(ON)(Typ.)=10.3mΩ @VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
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