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JXP8205MRG

20V Dual N-Channel Enhancement Mode MOSFET
The JXP8205MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.

DESCRIPTION
The JXP8205MRG uses advanced trench  technology to provide excellent RDS(ON), low gate  charge and high density cell Design for ultra low  on-resistance. This device is suitable for use as  a load switch or in PWM applications.
GENERAL FEATURES
VDS =20VID =4A RDS(ON)(Typ.)=28mΩ @VGS=2.5V RDS(ON)(Typ.)=22mΩ @VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
PWM applications
Load switch

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