Product Center
JXP8205MRG
20V Dual N-Channel Enhancement Mode MOSFET
The JXP8205MRG uses advanced trench
technology to provide excellent RDS(ON), low gate
charge and high density cell Design for ultra low
on-resistance. This device is suitable for use as
a load switch or in PWM applications.
DESCRIPTION
The JXP8205MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
VDS =20V,ID =4A RDS(ON)(Typ.)=28mΩ @VGS=2.5V RDS(ON)(Typ.)=22mΩ @VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
PWM applications
Load switch
相关推荐
recommends
-
JXP2N7002VRG
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. -
JXP2304VRG
1 -
JXP3416EVRG
The JXP3416EVRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. -
JXP3400MRG
The JXP3400MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. -
JXP2300VRG
The JXP2300VRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. -
NP2302FHR
The NP2302FHR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.