
Product Center

SFS2305F
SFS2307采用先进的沟槽技术与设计,可实现优异的栅极电荷(RDS)特性(导通状态),同时保持低栅极电荷。该器件适用于多种应用场景。应用于直流-直流转换器负载开关
VDS=-18V,ID=-8A RDS(on)
电压类型:19mΩ@ VGS=-4.5V
电压类型:25mΩ@ VGS=-2.5V
电压类型:19mΩ@ VGS=-4.5V
电压类型:25mΩ@ VGS=-2.5V
相关推荐
recommends
-

SFN2005PT
SFN2005PT采用先进的沟槽技术和设计,可提供优异的栅极电荷(RDS)特性且栅极电荷量低,适用于多种应用场景。 -

SFS2307
SFS2307采用先进的沟槽技术与设计,可实现优异的栅极电荷(RDS)特性(导通状态),同时保持低栅极电荷。该器件适用于多种应用场景。 -

SFR01507P7
总体描述 Power MOSFET具有极低的导通电阻,特别适用于需要超高功率密度和卓越效率的应用场景。 -

JXP3407MRG
The JXP3407MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. -

JXP3407VRG
The JXP3407VRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. -

JXP3401VRG
The JXP3401VRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.







