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JXP3407MRG
30V P-Channel Enhancement Mode MOSFET
The JXP3407MRG uses advanced trench
technology to provide excellent RDS(ON), low gate
charge and high density cell Design for ultra low
on-resistance. This device is suitable for use as
a load switch or in PWM applications.
DESCRIPTION
The JXP3407MRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
VDS =-30V，ID =-4A RDS(ON)(Typ.)=65mΩ @VGS=-4.5V RDS(ON)(Typ.)=46mΩ @VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
APPLICATION
PWM applications
Load switch
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