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NP2302FHR
20V N-Channel Enhancement Mode MOSFET
The NP2302FHR uses advanced trench technology
to provide excellent RDS(ON), low gate charge and high
density cell Design for ultra low on-resistance. This
device is suitable for use as a load switch or in PWM
applications.
Description
The NP2302FHR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
General Features
VDS =20V，ID =3A RDS(ON)(Typ.)=45mΩ @VGS=4.5V RDS(ON)(Typ.)=73mΩ @VGS=2.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
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