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NP2018DR
20V N-Channel Enhancement Mode MOSFET
The NP2018DR uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Description
The NP2018DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
VDS =20V，ID =16A RDS(ON)(Typ.)=8.6mΩ @VGS=4.5V RDS(ON)(Typ.)=10.7mΩ @VGS=2.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
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